Vishay/International Rectifier IRLD014 N-Channel Mosfet Package of 4 pieces FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25C 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V Vgs (Max) 10V FET Feature - Power Dissipation (Max) 1.3W (Ta) Rds On (Max) @ Id, Vgs 200 mOhm @ 1A, 5V Operating Temperature -55C ~ 175C (TJ) Mounting Type Through Hole Supplier Device Package 4-DIP, Hexdip, HVMDIP Package / Case 4-DIP (0.300", 7.62mm)